Argonne National Laboratory Center for Nanoscale Materials U.S. Department of Energy

State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies

The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies, Inc., exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM).

The method allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400°C, highly advantageous for integration with processed semiconductor electronic materials and resulting in the deposition of low-defect nanocrystalline diamond (NCD) thin films. The combination of CNM's low-temperature diamond technology with the AKHAN Miraj Diamond™ process represents the state of the art in diamond semiconductor thin-film technology.

With this acquisition, AKHAN plans to fabricate thin-film n-type NCD devices on four-inch fused silica wafers at CMOS-compatible thermal budget. AKHAN CEO Adam Khan commented, "The vertically integrated development capability now afforded through the combination of IP will allow for both next-generation performance devices and lower per-unit costs more conducive to present global industry demands." Anirudha Sumant, CNM Nanofabrication & Devices Group scientist and inventor of the Argonne technology, commented "This will break barriers that restricted the use of diamond thin films in the semiconductor industry limited to only p-type doping. The AKHAN process will allow us to fabricate efficient PIN junction devices based on diamond, which was not possible before, and Argonne's technology will allow integration with the existing CMOS platform."

As part of a recent collaborative project, characterization data of the company's Miraj Diamond technology have been published that confirms breakthrough morphological, phase, and electrical characterization data for both n-type NCD wafer material and NCD p-n diode devices. The full paper is available through Cambridge Journals Online.

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